Title:
エッチング処理方法及びプラズマ処理装置
Document Type and Number:
Japanese Patent JP6449141
Kind Code:
B2
Abstract:
To accelerate the etching by temperature control of an ultralow temperature.SOLUTION: An etching method is provided, which comprises: a first step of controlling a substrate surface temperature to be lower than -35°C, using first high-frequency power output by a first RF power source, and second high-frequency power output by a second RF power source to produce plasma from a hydrogen-containing gas and a fluorine-containing gas, and etching a silicon oxide film by the plasma; and a second step of stopping the output of the second RF power source and etching the silicon oxide film by the plasma, provided that the first and second steps are repeated more than once.SELECTED DRAWING: Figure 5
Inventors:
Tomura Shoki
Kinnobu Oya
Ryohei Takeda
High Ryuichi Shima
Kinnobu Oya
Ryohei Takeda
High Ryuichi Shima
Application Number:
JP2015248345A
Publication Date:
January 09, 2019
Filing Date:
December 21, 2015
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; H05H1/46
Domestic Patent References:
| JP7122546A | ||||
| JP4045529A | ||||
| JP5049904A | ||||
| JP2012069809A | ||||
| JP61240635A | ||||
| JP6260452A | ||||
| JP9298192A | ||||
| JP4233728A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito
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