Title:
ETCHING METHOD OF SEMICONDUCTOR CRYSTAL
Document Type and Number:
Japanese Patent JPS6199337
Kind Code:
A
Abstract:
PURPOSE:To enable mirror etching by wet etching after reactive ion etching of the 111A plane of III-V group compound semiconductor using a reactive gas at first. CONSTITUTION:The (111)A plane of a GaAs substrate 1 is etched approx. 5mum by RIE using carbon dichloride difluoride as a reactive gas and the conditions of the RIE are that the degree of vacuum is 5Pa and the power is 50-100W. Polishing damage is removed by the etching and a wafer is maintained mirror surface conditions. In this state, however, the damage due to the RIE exists from the surface of the wafer into approx. several 100Angstrom and the following wet etching is carried out. That is, by wet etching of approx. 2,000Angstrom using an etchant of aqueous ammonia: aqueous hydrogen peroxide: water = 30:1:15 (volume ratio) and the damage due to the RIE is removed and the surface of the wafer is made a mirror.
Inventors:
KAWADA HARUO
Application Number:
JP22150284A
Publication Date:
May 17, 1986
Filing Date:
October 22, 1984
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/306; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Sadaichi Igita
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