Title:
ETCHING METHOD FOR SUSCEPTOR
Document Type and Number:
Japanese Patent JPH03199195
Kind Code:
A
Abstract:
PURPOSE:To suppress the generation of pinholes by imposing the spare wafers of the same shape as the shape of wafers to be used in an epitaxy stage on the spot facing parts of a susceptor. CONSTITUTION:The spare wafers made of SiC of the same size and shape as the size and shape of the normal Si wafers to be used in the epitaxy stage are set in all the spot facing parts of the susceptor. The entire part of the susceptor is thereafter subjected to an etching treatment by gaseous HCl and the Si deposited in the parts exclusive of the spot facing parts is removed. The susceptor with which pinholes are not admitted in the spot facing parts is obtd.
Inventors:
KATO SHIGEO
TAZOE HARUO
TAN NOBUYUKI
TAZOE HARUO
TAN NOBUYUKI
Application Number:
JP33644489A
Publication Date:
August 30, 1991
Filing Date:
December 27, 1989
Export Citation:
Assignee:
TOSHIBA CERAMICS CO
International Classes:
C30B25/12; C23F1/12; H01L21/31; (IPC1-7): C23F1/12; C30B25/12; H01L21/31
Attorney, Agent or Firm:
Toru Tanabe
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