エッチング方法 - 東京エレクトロン株式会社

Title:

エッチング方法

Document Type and Number:

Japanese Patent JP7138529

Kind Code:

B2

Abstract:

The etching method includes a modification process and a removal process. In the modification process, a fluorine containing gas is supplied to an object having a silicon oxide film, so that a modification layer is formed on the surface of the silicon oxide film. In the removal process, the object, on which the modification layer has been formed, is exposed to plasma of a gas that contains ammonia, so that the modification layer is removed from the object. In addition, the modification process and the removal process are alternately repeated a plurality of times.

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Inventors:

Mitsunari Tadashi
Naotaka Noro
Moriya Go

Application Number:

JP2018183319A

Publication Date:

September 16, 2022

Filing Date:

September 28, 2018

Export Citation:

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Assignee:

東京エレクトロン株式会社

International Classes:

H01L21/3065

Domestic Patent References:

JP2015523734A
JP2017092144A
JP2009111330A
JP2017208510A
JP2018050055A

Foreign References:

WO2013171988A1

Attorney, Agent or Firm:

Sakai International Patent Office

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