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Title:
EVALUATING METHOD FOR FILM QUALITY
Document Type and Number:
Japanese Patent JPH06186160
Kind Code:
A
Abstract:

PURPOSE: To indirectly analyze a thin film on a glass substrate in which the film is formed under a similar condition by an infrared absorption spectrum obtained from a thin film on a silicon waver and to evaluate an accurate in-line film quality.

CONSTITUTION: When films are formed on glass substrates 6a, 6b in a film forming chamber 7 by a plasma CVD method, a silicon wafer 10 is set together with the substrate 6a on a substrate conveying tray 5b, the film formed on the wafer 10 is irradiated with an infrared light from an infrared light source 9, and an infrared absorption spectrum of the film is measured by an FT-IR spectrometer 8.


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Inventors:
MIWA MASAHIKO
BAURI SHINJI
HIBINO YOSHITAKA
Application Number:
JP34021292A
Publication Date:
July 08, 1994
Filing Date:
December 21, 1992
Export Citation:
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Assignee:
SHARP KK
International Classes:
G01N21/35; G01N21/3563; (IPC1-7): G01N21/35
Attorney, Agent or Firm:
Kenzo Hara



 
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