Title:
EVALUATION METHOD OF CRYSTAL DEFECT
Document Type and Number:
Japanese Patent JPH07335705
Kind Code:
A
Abstract:
PURPOSE: To provide an evaluation method which evaluates crystal defects including work strains of the surface of a silicon single crystal wafer.
CONSTITUTION: The OSF density of silicon single crystal wafer is determined by measuring a wafer life time in a plurality of measuring spots on the rear surface and or the front surface of the silicon single crystal wafer, thereby evaluating crystal defects of the silicon single crystal.
Inventors:
MIKI KATSUHIKO
KASUGA HIROYASU
KASUGA HIROYASU
Application Number:
JP13272894A
Publication Date:
December 22, 1995
Filing Date:
June 15, 1994
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
H01L21/66; (IPC1-7): H01L21/66
Attorney, Agent or Firm:
Shoji Ishihara
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