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Title:
EVALUATION OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH02144933
Kind Code:
A
Abstract:

PURPOSE: To simply execute an evaluation operation of high reliability by making a process to form a junction and an electrode unnecessary by a method wherein a carrier capture level is evaluated in a noncontact and nondestructive manner by using a pulse whose wavelength is changed from that of microwaves.

CONSTITUTION: A specimen semiconductor 6 is irradiated with incident microwaves 2 from a microwave oscillator 1 from a port of a vacuum container 5 via a circulator 3. The specimen semiconductor 6 is placed on a specimen stage 7 whose temperature is variable; a temperature of the specimen stage 7 can be changed. One part of a microwave-irradiated part of the specimen semiconductor is irradiated with pulsed monochromatic light which has been made monochromatic from white light radiated from a light source 9 by using a spectroscope 10 and which has been pulsed by using a pulsation apparatus 11. A wavelength of the pulsed monochromatic light 12 is changed from a long wavelength to a short wavelength by using the spectroscope 10. Reflected microwaves 4 are passed through the circulator 3 and are detected with a detector 8. A signal which has been detected with the detector 8 is sent to a signal processing apparatus 15 via an amplifier 13.


Inventors:
WATANABE KIKUO
ANDO TOSHIO
Application Number:
JP29809288A
Publication Date:
June 04, 1990
Filing Date:
November 28, 1988
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
G01N22/00; H01L21/66; (IPC1-7): G01N22/00; H01L21/66
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)



 
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