Title:
EXHAUST FACILITY SYSTEM
Document Type and Number:
Japanese Patent JP2019012812
Kind Code:
A
Abstract:
To provide an exhaust facility in which the residual amount of by-products in an exhaust facility is reduced to further improve the operation rate of the exhaust facility.SOLUTION: In order to evacuate a chamber 14 of a semiconductor manufacturing apparatus 12, a vacuum pump 10 is installed downstream of the chamber 14. A gas supply device 18 is connected to the vacuum pump 10 and supplies a gas containing hydrogen halide and nitrogen to the vacuum pump 10.SELECTED DRAWING: Figure 1
Inventors:
MAISHIGI KEIJI
SUGIURA TETSUO
HUANG LU XIANG
HARADA MINORU
SUGIURA TETSUO
HUANG LU XIANG
HARADA MINORU
Application Number:
JP2018016913A
Publication Date:
January 24, 2019
Filing Date:
February 02, 2018
Export Citation:
Assignee:
EBARA CORP
International Classes:
H01L21/3065; C23C16/44; F04B37/16; F04C23/00; F04C25/02; F04C29/12
Attorney, Agent or Firm:
Shinjiro Ono
Toru Miyamae
Yukio Kanegae
Koichi Kushida
Makoto Watanabe
Toru Miyamae
Yukio Kanegae
Koichi Kushida
Makoto Watanabe