To attain a high throughput, in an exposure device that uses, for example, an EUV light.

The exposure device includes an illumination optical system illuminating a reflection-type mask (M) installed on a first surface, by using a light from a light-condensing point (1a) on which light emitted from a light source (1) is condensed; and a projection optical system (PO) projecting a pattern of the mask to a photoreceptive substrate (W) installed on a second surface. The illumination optical system and the projection optical system satisfy the condition: 0.12<Dh/Dv<1.34, if the length of a perpendicular line from the light-condensing point to an optical axis (AX) of the projection optical system is defined as Dh, and the distance between the first and second surfaces along the optical axis is defined as Dv.