FABRICATION OF P TYPE AMORPHOUS SILICON THIN FILM

Title:

FABRICATION OF P TYPE AMORPHOUS SILICON THIN FILM

Document Type and Number:

Japanese Patent JPS6072224

Kind Code:

A

Abstract:

PURPOSE:To obtain the P type amorphous Si thin film without a cloud or peeling by growing the film on a conductive substrate by plasma CVD with the atmosphere of 60Pa or under and the high frequenct electric power density of 8X 10<-2>W/cm<2> or over. CONSTITUTION:A capacity coupling type CVD device and a glass substrate are used. The substrate temperature is set at 250 deg.C and the mix gas of SiH4 and B2H6 is flown on the substrate. At this time, a ratio of this material gas is set to be B2H6/SiH4approx.=100ppm and an atmosphere and a high frequency electric power density are regulated to be 60Pa or under and 8X10<-2>W/cm<2> or over respectively. By thus selecting low atmosphere and a high electric power density as growing condition, the uniform film without a cluster and a microvoid can be obtained even if a density of boron to be included is high as approx.>100ppm and the effective contact area of the substrate and surface atoms is enlarged.

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Inventors:

KAKINUMA HIROAKI
YOSHIDA MAMORU
NISHIKAWA SATORU

Application Number:

JP17988683A

Publication Date:

April 24, 1985

Filing Date:

September 28, 1983

Export Citation:

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Assignee:

OKI ELECTRIC IND CO LTD

International Classes:

H01L31/04; H01L21/205; (IPC1-7): H01L31/04

Attorney, Agent or Firm:

Takashi Ogaki

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