FABRICATION OF SEMICONDUCTOR DEVICE

Title:

FABRICATION OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP3039350

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a method, when a coated insulating film is used for filling or bury a trench and is cracked, for easily removing only the cracked film and re-forming a new coated insulating film.
SOLUTION: A semiconductor substrate 11 having a trench 12 therein is formed thereon with a silicon dioxide film 13, a first silicon nitride film 14 and then a tetraethoxysilane(TEOS)-boron/phosho-added silicate glass(BPSG) film (glass film of TEOS containing borons and phosphori) 15, and the trench 12 is fully filled. Thereafter, the TEOS-BPSG film 15 other than the trench area is removed. Next, a second silicon nitride film 17 is formed and then a coated phospho-silicate glass(PSG) film 18 thereon to flatten steps thereon (step C). After that, as shown in a step D, etch-back is carried out in the order of the coated PSG film 18, upper second silicon nitride film 17 and lower first silicon nitride film 14. Since the etching rate of the second silicon nitride film 17 is much smaller than that of the coated PSG film 18, even when the coated PSG film 18 is cracked, only the coated PSG film 18 can be easily removed and re-formed.

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Inventors:

Akira Ohashi

Application Number:

JP447096A

Publication Date:

May 08, 2000

Filing Date:

January 16, 1996

Export Citation:

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