Title:
FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3259537
Kind Code:
B2
Abstract:
PURPOSE: To suppress generation of silicon nodule by a method wherein deposition of film is started by introducing oxygen gas after evacuation of a thin metal film deposition chamber, a film is deposited by further evacuating the chamber upon elapse of a predetermined time, and a conductive film of aluminum or an aluminum alloy is formed.
CONSTITUTION: Opening 6 are made through an interlayer insulation film 5 and a gate insulation film 3 to reach a source region 2a and a drain region 2b, respectively, and an insulating substrate 1 is set in a sputtering system which is then evacuated. Sputtering is started by introducing a gas containing oxygen and the chamber is further evacuated upon elapse of a predetermined time thus depositing a conductive film 7 of aluminum or aluminum alloy. Since no oxygen is robbed from the insulation film 5, silicon is not liberated and thereby generation of silicon nodule is prevented in the conductive film 7 principally comprising aluminum.
Inventors:
Akira Nakamura
Fumiaki Emoto
Koji Senda
Fumiaki Emoto
Koji Senda
Application Number:
JP20344494A
Publication Date:
February 25, 2002
Filing Date:
August 29, 1994
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/285; H01L21/28; H01L21/3205; H01L21/336; H01L21/768; H01L23/52; H01L29/786; (IPC1-7): H01L21/285; H01L21/3205; H01L21/768
Domestic Patent References:
| JP6140353A | ||||
| JP590193A | ||||
| JP3288428A | ||||
| JP6116723A | ||||
| JP461322A | ||||
| JP234918A | ||||
| JP5259104A | ||||
| JP289320A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)