PURPOSE: To enhance the integration degree by forming a silicon oxide film extending from the main surface of another silicon crystal to silicon oxide film and covering the periphery thereof with an element region thereby isolating the element positively while decreasing the region required for isolation.
CONSTITUTION: Silicon oxide 3 is embedded in a flat single crystal substrate 30 of silicon. The mirror surface of the substrate 30 and the silicon oxide 33 is applied tightly with the mirror surface of a substrate 34 of single crystal silicon having conductivity type same as or opposite to that of the substrate 30 and then they are heat treated to obtain a rigidly bonded body 35. Silicon oxide is formed of the silicon crystal structure 35 extending from the main surface of other silicon crystal 34 to the silicon oxide 33 and the periphery thereof is covered with an element region 41. This structure realizes perfect electrical isolation of the region surrounded by the silicon oxides 33, 40.
KURAMOTO TAKESHI
SHINPO MASARU
