Title:
THIN FILM TRANSISTOR AND MANUFACTURE METHOD THEREOF
Document Type and Number:
Japanese Patent JP3018128
Kind Code:
B2
Abstract:
PURPOSE: To minimize the specific resistance so that the title thin film transistor used for an active matrix type liquid crystal displayer may extremely restrain the delay in signal, etc., furthermore minimizing the line width of the first conductive layer to be a gate electrode thereby enabling the transistor to be super-miniaturized.
CONSTITUTION: The first conductive layer 2 to be a gate electrode is composed of a lower conductive layer 2a comprising a cubic systematic metal or niobium nitride and an upper conductive layer 2b comprising α-tantalum.
Inventors:
Yuuki Ishida
Application Number:
JP10623592A
Publication Date:
March 13, 2000
Filing Date:
April 24, 1992
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
H01L29/40; H01L29/78; H01L29/786; (IPC1-7): H01L29/786; H01L29/40
Domestic Patent References:
| JP2106723A |