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Title:
FERROELECTRIC MEMORY AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3894275
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a ferroelectric memory and its manufacturing method which properly and finely processes a ferroelectric film, with residues hardly adhering caused by electrode materials to the sidewalls of the ferroelectric film.
SOLUTION: The method of manufacturing a ferroelectric memory which includes a capacitor structure of a laminate of first electrodes, a ferroelectric film and second electrodes comprises a step (a) of forming a ferroelectric continuous film 30a on an electrode film for the first electrodes and then forming a mask layer 40 having a specified pattern, a step (b) of anisotropically etching the continuous film 30a masked with the mask layer 40 to selectively remove it with leaving a film of a specified thickness t, and a step (c) of treating with chemicals, to remove the film of the specified thickness left in step (b). The step (b) is followed by a step of supplying a reactive species 52 to the film of a prescribed thickness, to form a layer 34 of a reaction product of the ferroelectric forming the prescribed thickness film with the reactive species.


Inventors:
Nao Nishikawa
Masao Nakayama
Application Number:
JP2000274513A
Publication Date:
March 14, 2007
Filing Date:
September 11, 2000
Export Citation:
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Assignee:
Seiko Epson Corporation
International Classes:
H01L21/8246; H01L21/8247; H01L21/302; H01L21/306; H01L21/3065; H01L27/105; H01L29/788; H01L29/792; (IPC1-7): H01L27/105; H01L21/3065; H01L21/306; H01L21/8247; H01L29/788; H01L29/792
Domestic Patent References:
JP2000183287A
JP9289191A
JP10022463A
JP8316433A
Attorney, Agent or Firm:
Yukio Fuse
Mitsue Obuchi