To provide a ferromagnetic Fe oxide thin film whose thin film structure control in manufacturing is easy and which has magnetization more than 2,500 G, preferably magnetization more than 3,000 G.

A thin film of a ferromagnetic thin film material shown by a general formula L100-x-yFexOyis formed by a thin film manufacturing equipment, e.g. a high frequency sputtering equipment. In the formula, x and y are shown by the following formulas, 90≤x+y<100, 27≤x≤67, 37≤y≤67, and L shows one kind element or two kinds of element among Mo, W, Ge, Cr, and Mg, and each figure shows an atomic ratio.

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