FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC MEMORY DEVICE, AND METHOD FOR MANUFACTURING FERROMAGNETIC TUNNEL JUNCTION ELEMENT

Japanese Patent JP3825730

B2

PROBLEM TO BE SOLVED: To provide a ferromagnetic tunnel junction element that retains its high MR ratio after a high-temperature process and a method for manufacturing the same, and to provide a magnetic memory device using the same. SOLUTION: The ferromagnetic tunnel junction element 1 comprises an antiferromagnetic layer 11, a free layer 12 which exhibits ferromagnetism and wherein magnetization direction is variable upon field application, a pin layer 13 which is positioned between the antiferromagnetic layer 11 and the free layer 12 and exhibits ferromagnetism and wherein magnetization direction is not variable upon field application, and a tunnel barrier layer 14 which is sandwiched between the free layer 12 and the pin layer 13. The pin layer 13 has first/second ferromagnetic metal layers 13a and a magnetic intermediate layer 13b which is sandwiched between the first/second ferromagnetic metal layers 13a and contains crystal grains of a magnetic metal material wherein oxygen and/or nitrogen is localized along crystal grain boundaries.