PURPOSE: To improve the adhesion between an FET gate and an org. sensitive film and to extend the life thereof by forming a support having an optional shape such as a bar, plate, spot or grid shape on a micro-gate.
CONSTITUTION: A channel 6 is constituted of a drain 4 and a source 5 formed by diffusing an impurity into a silicon base plate 1. A columnar photoresist support 7 is installed on the insulating film in the gate part thereof. An insulating film 9 consisting of an oxide film 8 and a silicon nitride film is formed in the gate part of the plate 1. A photoresist material is coated over the entire part of the element after formation of the insulating film and is prebaked and thereafter UV light is irradiated thereto to cure only the columnar part 7. The photoresist material is further subjected to post baking, then the photoresist in the unnecessary part is removed. The photoresist support 7 is formed by the operation thus far and therefore, a casting liquid of a high polymer ion sensitive film is coated thereon and the solvent is dried to evaporate to form a sensitive film 10.
MARUIZUMI TAKUYA
TSUKADA KEIJI
