Title:
FIELD EFFECT TRANSISTOR OF INSULATION GATE TYPE
Document Type and Number:
Japanese Patent JPS53123679
Kind Code:
A
Abstract:
PURPOSE: To improve the integration with the need for a shorting metal contact eliminated, by providing a polycrystal or noncrystal region by ion-injecting on boundary surfaces and adjacent part of a source region and substrate so as to short them.
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Inventors:
MIYAMOTO AKIRA
OOTA MICHIHIRO
OOTA MICHIHIRO
Application Number:
JP3886977A
Publication Date:
October 28, 1978
Filing Date:
April 04, 1977
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/78; H01L21/265; H01L29/06; H01L29/41; (IPC1-7): H01L21/265; H01L29/06; H01L29/78