Title:
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JP2023034252
Kind Code:
A
Abstract:
To manufacture a field effect transistor that does not require a transfer.SOLUTION: A method of manufacturing a field effect transistor according to an embodiment of the present invention includes the steps of: forming a dielectric thin film on a conductive substrate serving as a back gate; setting molybdenum or molybdenum with a surface oxidized in advance, as a raw material, to 600°C to 800°C, setting the conductive substrate with the dielectric thin film formed thereon to a temperature of 450°C to 700°C lower than the temperature of the raw material, and forming a crystalline layer of molybdenum trioxide by a vapor growth method in which gas comprising oxygen and nitrogen is flown, on the dielectric thin film; and forming ohmic electrodes respectively serving as a source and a drain, on the crystalline layer of molybdenum trioxide.SELECTED DRAWING: Figure 4
Inventors:
KATODA TAKASHI
Application Number:
JP2021140402A
Publication Date:
March 13, 2023
Filing Date:
August 30, 2021
Export Citation:
Assignee:
KATODA TAKASHI
SAITO ISAO
SAITO ISAO
International Classes:
H01L21/336; H01L29/786
Attorney, Agent or Firm:
Okabe
Koji Yoshizawa
Haruhiko Mimura
Hiroshi Okabe
Takashi Miyake
Koji Yoshizawa
Haruhiko Mimura
Hiroshi Okabe
Takashi Miyake