Field effect transistor structure - Samsung Electronics Co.,Ltd.

Title:

Field effect transistor structure

Document Type and Number:

Japanese Patent JP6161350

Kind Code:

B2

Abstract:

Field effect transistors are provided. According to the field effect transistor, a source region and a drain region are provided on a substrate and a fin portion is provided to protrude from the substrate. The fin portion connects the source region and the drain region to each other. A gate electrode pattern is disposed on the fin portion and extends to cross over the fin portion. A gate dielectric layer is disposed between the fin portion and the gate electrode pattern. A semiconductor layer is disposed between the fin portion and the gate dielectric layer. The semiconductor layer and the fin portion have dopant-concentrations different from each other, respectively.

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Inventors:

Wu Chang Yu
Ginger Akiyoshi
Gold
Youn planting

Application Number:

JP2013058507A

Publication Date:

July 12, 2017

Filing Date:

March 21, 2013

Export Citation:

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Assignee:

Samsung Electronics Co.,Ltd.

International Classes:

H01L21/336; H01L21/8238; H01L27/092; H01L29/78; H01L29/786

Domestic Patent References:

JP2005045245A
JP2011527124A
JP2009521113A
JP2007059427A
JP2007305827A

Foreign References:

US20110121404
US20050263795
US20070090416

Attorney, Agent or Firm:

Kyosei International Patent Office

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