Field effect transistor - Nichia Corporation

Title:

Field effect transistor

Document Type and Number:

Japanese Patent JP6326781

Kind Code:

B2

Inventors:

Shunsuke Minato

Application Number:

JP2013240850A

Publication Date:

May 23, 2018

Filing Date:

November 21, 2013

Export Citation:

Assignee:

Nichia Corporation

International Classes:

H01L21/338; H01L21/28; H01L21/3205; H01L21/768; H01L23/522; H01L29/41; H01L29/417; H01L29/778; H01L29/812

Domestic Patent References:

Attorney, Agent or Firm:

Samejima Mutsumi
Keiichi

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