Title:
FIELD EFFECT TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH04352477
Kind Code:
A
Abstract:
PURPOSE: To enable di/dt resistance of a built-in diode to be improved by suppressing increase in ON resistance.
CONSTITUTION: A heavy metal diffusion region 11 such as gold and platinum is formed only at a p+-type semiconductor region 2a below a gate bonding pad 10 and a gate electrode 6 of a power MOS FET, thus enabling minority carriers which are implanted when a forward voltage are applied to a built-in diode to be extinguished due to a heavy metal which is diffused at the time of inverse recovery and one portion of current to be center to a cell near the gate bonding pad and the date electrode for preventing flow at the time of inverse recovery.
Inventors:
HATATE KAZUNARI
Application Number:
JP12737291A
Publication Date:
December 07, 1992
Filing Date:
May 30, 1991
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/78; (IPC1-7): H01L29/784
Attorney, Agent or Firm:
Mamoru Takada (1 person outside)