Title:
電界電子放出素子
Document Type and Number:
Japanese Patent JP4206858
Kind Code:
B2
Abstract:
A field emission element has a gate electrode stacked on a substrate, an emitter electrode stacked on the gate electrode via an interlayer insulating layer, and an anode electrode formed on another substrate facing the emitter electrode. Further, the field emission element includes an anode pixel formed by the anode electrode and a generally rectangular fluorescent body formed thereon and a plurality of wells, each being formed in the emitter electrode and the interlayer insulating layer in a form of a narrow elongated hole. Here, the wells are disposed within a generally rectangular electron emitting area and at least a majority of the wells are arranged parallel to each other, and a length direction of the majority of the wells is substantially normal to that of the fluorescent body and the electron emitting area.
Inventors:
Taniguchi Masateru
Manabu Kitada
Kazuhito Nakamura
Satoshi Kawada
Manabu Kitada
Kazuhito Nakamura
Satoshi Kawada
Application Number:
JP2003285874A
Publication Date:
January 14, 2009
Filing Date:
August 04, 2003
Export Citation:
Assignee:
Futaba Electronics Co., Ltd.
International Classes:
H01J29/04; H01J31/12; H01J1/02; H01J1/304; H01J1/62; H01J63/04
Domestic Patent References:
| JP8264107A | ||||
| JP4328222A | ||||
| JP2000090861A | ||||
| JP2000251617A |
Attorney, Agent or Firm:
Atsuo Waki
Nobuo Suzuki
Nobuo Suzuki