Title:
シリサイドナノワイヤーを有する電界放出素子及びその製造方法
Document Type and Number:
Japanese Patent JP4870133
Kind Code:
B2
Abstract:
A field emission with silicide nano wires and a device fabrication method are provided to improve the performance by increasing the emission current with the less voltage. A substrate is formed of the conductor or the non-electric conductor. The metallic catalyst is coated on the top of substrate. The metallic catalyst is comprised of the metal with the superior conductivity selected from the group including nickel, iron, cobalt, platinum, molybdenum, tungsten, yttrium, gold, and palladium. The silicon layer is formed on the upper side of substrate. The metal silicide layer with the superior conductivity is formed by the reaction between the metallic catalyst and the silicon layer.
Inventors:
Kim Shun Dong
Korea
Lee
Korea
Lee
Application Number:
JP2008270434A
Publication Date:
February 08, 2012
Filing Date:
October 21, 2008
Export Citation:
Assignee:
KOREA INSTITUTE OF MACHINERY & MATERIALS
International Classes:
H01J9/02; H01J1/304; H01J31/12; H01J63/06
Domestic Patent References:
| JP2006041518A | ||||
| JP200560920A | ||||
| JP200487510A |
Attorney, Agent or Firm:
Yamada Patent Office