Title:
フィルムバルク音響共振器及びその製造方法
Document Type and Number:
Japanese Patent JP4490951
Kind Code:
B2
Abstract:
A film bulk acoustic resonator includes a substrate (101); a lower electrode (110) formed on top of the substrate (101); a piezoelectric membrane (113) formed on top of the lower electrode (110) and having a crystallographic axis (CC) so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode (110); and an upper electrode (115) formed on top of the piezoelectric membrane (113). The circumference of the piezoelectric membrane (113) may comprise an enveloping wall (117) which may be patterned on the same layer as that of forming the upper electrode (115).
Inventors:
Kimdeok
Satoshi Kim
Park Yoo
Satoru Satoshi
River pillar
Song Tora
Satoshi Kim
Park Yoo
Satoru Satoshi
River pillar
Song Tora
Application Number:
JP2006189256A
Publication Date:
June 30, 2010
Filing Date:
July 10, 2006
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
H03H9/17; H01L41/09; H01L41/18; H01L41/187; H01L41/22; H01L41/23; H01L41/316; H03H3/02
Domestic Patent References:
| JP2001156583A | ||||
| JP2000224001A |
Foreign References:
| WO2002093549A1 |
Other References:
J.S.Wang、他2名,Sputtered C-Axis Inclined Piezoelectric Films and Shear Wave Resonators,37th Annual Symposium on Frequency Control.1983,1983年,p.144-p.150
Attorney, Agent or Firm:
Yukio Ono
Tomoko Inazumi
Tomoko Inazumi