To provide a film deposition apparatus capable of uniformly depositing desired films on the surface of a substrate to be treated, such as wafer, without being affected by the surface state, etc., of the substrate to be treated, such as the plasma density in a vacuum chamber and the flying state of the particles from a target and a deposition method therefor.

This apparatus has a substrate 6 for holding a wafer 5, a holder vertical moving device 12 for vertically moving the substrate holder 6, a holder joint 10 for changing the angle of the substrate holder 6 with a horizontal direction and a holder rotating device for rotating the substrate holder 6 around a perpendicular axis. The desired films are uniformly deposited on the surface of the wafer 5 and the good deposition treatment of contact holes, through-holes, etc., is made possible by vertically moving the substrate holder 6, changing the angle of the substrate holder 6 with the horizontal direction and rotating the substrate holder 6 around the perpendicular axis.