Title:
成膜装置
Document Type and Number:
Japanese Patent JP5280784
Kind Code:
B2
Abstract:
There is provided film deposition units 54 each including two electrodes, each film deposition unit 54 being configured to generate a plasma between the two electrodes to cover substrates 90 with DLC films, a chamber 12 in which the plural film deposition units 54 are arranged, and a pulsed power supply 60 including electric circuits 62 that are arranged for the respective film deposition units 54, the electric circuits 62 applying a DC pulse voltage between a support electrode 51 and a counter electrode 52 of each of the film deposition units 54.
More Like This:
| WO/2021/084911 | FILM FORMING DEVICE |
| WO2004008493 | METHOD AND APPARATUS FOR SUPPORTING SEMICONDUCTOR WAFERS |
| WO/2014/118062 | COMMON DEPOSITION PLATFORM, PROCESSING STATION AND METHOD OF OPERATION THEREOF |
Inventors:
Takao Saito
Tatsuya Terazawa
Tatsuya Terazawa
Application Number:
JP2008247728A
Publication Date:
September 04, 2013
Filing Date:
September 26, 2008
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
C23C16/54; C23C16/27; C23C16/42; C23C16/50; C23C16/515
Domestic Patent References:
| JP8085876A | ||||
| JP64031974A | ||||
| JP2004277800A | ||||
| JP2003013225A | ||||
| JP2002363747A |
Attorney, Agent or Firm:
Aitec International Patent Office