Title:
FILM DEPOSITION METHOD OF TRANSPARENT CONDUCTIVE OXIDE FILM
Document Type and Number:
Japanese Patent JP3788613
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a low-temperature film deposition method of a transparent conductive oxide film having lower electric resistivity by using a DC sputter method.
SOLUTION: The transparent conductive oxide film is subjected to crystal growth in a chamber 12 having a metal target 22 and a non-heating substrate holder 26 with a substrate 24 mounted thereon by using a DC sputter method in an atmosphere containing hydrogen radicals. Hydrogen radicals promote generation of oxygen deficiency in crystals of the transparent conductive oxide film, and as a result, substitution of metal atoms for donor atoms is promoted to increase the carrier concentration.
Inventors:
Jiro Tsujino
Application Number:
JP2002355781A
Publication Date:
June 21, 2006
Filing Date:
December 06, 2002
Export Citation:
Assignee:
Hokkaido Electric Power Company
International Classes:
C23C14/08; C23C14/34; H01L21/285; (IPC1-7): C23C14/08; C23C14/34; H01L21/285
Domestic Patent References:
| JP2163363A |
Attorney, Agent or Firm:
Takashi Ogaki
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