Title:
FILM FORMATION OF CVD-TITANIUM FILM
Document Type and Number:
Japanese Patent JP3636866
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a film formation method of a CVD-Ti film which can form a Ti film with high step coverage in a fine hole position formed in an insulation film.
SOLUTION: When a CVD-Ti film is formed in a layer insulation film or an insulation film with a hole formed on an Si wafer or an Si film thereon, an Si wafer W is loaded inside a chamber 1, an inside of the chamber 1 is made specified vacuum atmosphere, TiCl4 gas, H2 gas and Ar gas are introduced into the chamber 1, plasma is generated inside the chamber 1 and a Ti film is formed. In the process, flow rate of the gas, a wafer temperature, a pressure inside a chamber and charge power during plasma formation are adjusted to form a Ti film in a hole position at high selectivity to a layer insulation film or an insulation film.
Inventors:
Hideki Yoshikawa
Yasuo Kobayashi
Kunihiro Tada
Yasuo Kobayashi
Kunihiro Tada
Application Number:
JP20547597A
Publication Date:
April 06, 2005
Filing Date:
July 16, 1997
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
C23C16/08; H01L21/28; H01L21/285; H01L21/31; C23C16/14; H01L21/768; (IPC1-7): H01L21/285; C23C16/14; H01L21/28
Domestic Patent References:
| JP6013332A | ||||
| JP9181016A |
Attorney, Agent or Firm:
Hiroshi Takayama