Title:
成膜方法および発光装置の作製方法
Document Type and Number:
Japanese Patent JP5410791
Kind Code:
B2
Abstract:
A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.
Inventors:
Shunpei Yamazaki
Tomoya Aoyama
Takuya Tsurume
Takao Hamada
Tomoya Aoyama
Takuya Tsurume
Takao Hamada
Application Number:
JP2009060645A
Publication Date:
February 05, 2014
Filing Date:
March 13, 2009
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
C23C14/04; H05B33/10; H01L51/50
Domestic Patent References:
| JP2000077182A | ||||
| JP2006309995A | ||||
| JP2005307254A |
Attorney, Agent or Firm:
Hirokuni Kamo