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Patent Searching and Data


Title:
FILM-FORMING COMPOSITION, FORMATION OF FILM AND LOW- DENSITY FILM
Document Type and Number:
Japanese Patent JP2001049174
Kind Code:
A
Abstract:

To provide a film-forming composition excellent in storage stability, capable of imparting a film excellent in dielectric constant characteristics and useful as an interlayer insulating film in semiconductor elements, etc.

This film-forming composition comprises (A) at least one kind selected from the group consisting of silane compounds of R2R3R4Si(OR1), R2R3Si(OR1)2, R2Si(OR1)3, Si(OR1)4, and R2s(OR1)3-sSiRSi(OR1)3-tR2t (wherein R1 to R4 are each a monovalent organic group; R is a divalent organic group; s and t are each an integer of 0 to 1) or its hydrolyzate and/or condensation product, (B) at least one organic polymer selected from the group of a polyether, a polyester, a polycarbonate and a polyanhydride and (C) an alcohol-based solvent and/or a ketone-based solvent.


Inventors:
KUROSAWA TAKAHIKO
SHIODA ATSUSHI
YAMADA KINJI
Application Number:
JP17769699A
Publication Date:
February 20, 2001
Filing Date:
June 24, 1999
Export Citation:
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Assignee:
JSR CORP
International Classes:
C08L33/02; C08L67/00; C08L69/00; C08L71/00; C08L73/02; C08L83/04; C09D133/02; C09D167/00; C09D169/00; C09D171/00; C09D183/04; (IPC1-7): C09D183/04; C08L33/02; C08L67/00; C08L69/00; C08L71/00; C08L73/02; C08L83/04; C09D133/02; C09D167/00; C09D169/00; C09D171/00
Attorney, Agent or Firm:
Shirai Shigetaka