To provide a film-forming composition capable of forming an insulating film that is not susceptible to damages even in an etching process and maintains film characteristics, an insulating film formed from such a film-forming composition, and a semiconductor device equipped with such an insulating film.
The film-forming composition includes a polymerizable compound having a polymerizable functional group, wherein the polymerizable compound has, in the molecule, a partial structure including a cage structure of an adamantane type and a polymerizable reactive group that contributes to polymerization reaction. The polymerizable reactive group has an aromatic ring and an ethynyl group or a vinyl group directly bonded to the aromatic ring. In the polymerizable compound, the number of carbon atoms derived from the aromatic ring is 15-38% relative to the number of carbon atoms of the whole polymerizable compound.
SAITO HIDENORI
HARADA TAKAHIRO
MATSUTANI MIHOKO
JP2001332543A | 2001-11-30 | |||
JP2005041938A | 2005-02-17 | |||
JP2007317817A | 2007-12-06 | |||
JP2008166752A | 2008-07-17 | |||
JP2008218632A | 2008-09-18 | |||
JP2006245458A | 2006-09-14 | |||
JP2007070597A | 2007-03-22 | |||
JP2009084329A | 2009-04-23 |
Kazuo Asahi