Title:
DEPOSITION METHOD AND DEPOSITION DEVICE
Document Type and Number:
Japanese Patent JP2023068619
Kind Code:
A
Abstract:
To provide a technique of improving selectivity in a region where a metal film is formed.SOLUTION: A deposition method contains following steps (A) to (C): a step (A) of preparing a substrate having a first film containing a boron and a second film formed by a material different from that of the first film on a front surface; a step (B) of supplying a material gas containing halogen and an element X of halogen to the front surface of the substrate; and a step (C) of supplying a reaction gas containing a plasma oxygen to the front surface of the substrate. By the deposition method, a third gild as an oxygen film of the element X is selectively formed on the second film toward the first film by alternately supplying the material gas and the plasma reaction.SELECTED DRAWING: Figure 1
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Inventors:
FUJITA SHIGEKI
MURAKAMI HIROKI
MURAKAMI HIROKI
Application Number:
JP2022147033A
Publication Date:
May 17, 2023
Filing Date:
September 15, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/316; C23C16/04; C23C16/40; C23C16/455; H01L21/31
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito