Title:
FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS
Document Type and Number:
Japanese Patent JP2023120622
Kind Code:
A
Abstract:
To provide a film deposition method and a film deposition apparatus capable of depositing a carbon film having low stress.SOLUTION: A film deposition method has the steps of: mounting a substrate on a substrate mounting table arranged in a treatment container; decompressing an inside of the treatment container by exhausting; generating plasma by applying high frequency power for plasma generation to the substrate mounting table while supplying a treatment gas containing a carbon containing gas into the decompressed treatment container, and depositing a carbon film on the substrate; and applying the high frequency power for plasma generation and performing plasma treatment by applying a negative DC voltage to a counter electrode facing the substrate mounting table.SELECTED DRAWING: Figure 2
Inventors:
MITSUNARI TADASHI
ARAI HIROTAKA
KISHI YUTARO
HAMADA YASUHIRO
ARAI HIROTAKA
KISHI YUTARO
HAMADA YASUHIRO
Application Number:
JP2022023572A
Publication Date:
August 30, 2023
Filing Date:
February 18, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
C23C16/26; C23C16/50; C23C16/56; H01L21/205; H01L21/3065; H01L21/314
Attorney, Agent or Firm:
Hiroshi Takayama
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