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Title:
FILM-FORMING METHOD, INSULATING FILM, AND SUBSTRATE FOR SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP2003179050
Kind Code:
A
Abstract:

To obtain a forming method of an insulating film for semiconductors that has superior coherency with a film formed by a CVD (Chemical Vapor Deposition) method as an interlayer insulating film material in a semiconductor device or the like.

In the film-forming method, a substrate is treated by an alkoxy silane compound having a reactivity group and the hydrolysis condensation product or either of them (A), at least one kind of silane compound that is selected from tetrafunctional alkoxy silane, trifunctional alkoxy silane, and difunctional alkoxy silane is heated by applying the hydrolysis condensation product that is subjected to hydrolysis and condensation under the presence of water and a catalyst, and a composition for film formation containing an organic solvent (B).


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Inventors:
SEKIGUCHI MANABU
YOSHIOKA MUTSUHIKO
SHIODA ATSUSHI
NISHIKAWA MICHINORI
YAMADA KINJI
Application Number:
JP2002235589A
Publication Date:
June 27, 2003
Filing Date:
August 13, 2002
Export Citation:
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Assignee:
JSR CORP
International Classes:
B05D3/02; B05D5/12; B05D7/00; B05D7/24; C09D5/25; C09D183/02; C09D183/04; C09D183/14; H01L21/312; H01L21/316; H01L21/768; H01L23/522; (IPC1-7): H01L21/316; B05D3/02; B05D5/12; B05D7/00; B05D7/24; C09D5/25; C09D183/02; C09D183/04; C09D183/14; H01L21/312; H01L21/768
Domestic Patent References:
JPH05117505A1993-05-14
JP2001081429A2001-03-27
JP2001017864A2001-01-23
JP2001191026A2001-07-17
JP2001192616A2001-07-17
JPH10158011A1998-06-16
JP2000327933A2000-11-28
JPH0616724A1994-01-25
JPH11189705A1999-07-13
JPH10319597A1998-12-04
Foreign References:
WO1999003926A11999-01-28



 
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