FILM FORMING METHOD AND MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME

Title:

FILM FORMING METHOD AND MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME

Document Type and Number:

Japanese Patent JPH07307308

Kind Code:

A

Abstract:

PURPOSE: To reduce stress on a polycrystalline silicon film and a silicide film, and prevent film exfoliation and damage on a substratum.

CONSTITUTION: When a polycrystalline silicon film 4 is deposited on a semiconductor substrate 1, heat treatment is performed after a polycrystalline silicon film 4a is thinnly deposited. Further after a polycrystalline silicon film 4b is thinnly deposited, heat treatment is performed. In this manner, the deposition of the polycrystalline silicon film 4 is divided into a plurality of times, and heat treatment is performed for each of the deposited thin polycrystalline silicon films 4a-4d. Thereby the growth of grains at the time of crystallization is restrained.

Inventors:

KAJITA MIKA
YOSHIDA MASAYOSHI
KATO HISAYUKI
SUZUKI NORIO

Application Number:

JP9826894A

Publication Date:

November 21, 1995

Filing Date:

May 12, 1994

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

C23C16/44; H01L21/205; H01L21/28; H01L21/3205; H01L23/52; H01L29/78; (IPC1-7): H01L21/28; C23C16/44; H01L21/205; H01L21/3205; H01L29/78

Attorney, Agent or Firm:

Yamato Tsutsui

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