Title:
PIEZOELECTRICITY/ELECTROSTRICTION FILM TYPE ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3162584
Kind Code:
B2
Abstract:
PURPOSE: To provide a high reliability element wherein the influence of a diaphragm part upon the sintering property of a piezoelectricity/electrostriction layer is improved, in a piezoelectricity/electrostriction film type element wherein a piezoelectricity/electrostriction operation part is formed on the outer surface of the diaphragm part of a ceramic substrate by a film forming method, and a piezoelectricity/electrostriction layer of high sintering property (denseness) is formed, and the method capable of effectively manufacturing the element.
CONSTITUTION: A piezoelectricity/electrostriction layer 14 is constituted of a dense member wherein the crystal grain diameter is 0.7μm or larger and the void content (x) is 15% or less. The deflection ratio (y) wherein the deflection amount of the central part of a diaphragm part 10 to the shortest dimension passing the center of a window part 6 is expressed by percentage is in the range of 0-8%. The piezoelectricity/electrostriction layer 14 is so constituted that the void content (x) and the deflection ratio (y) satisfy the relation: y≤0.1167x2-3.317x+25.5.
More Like This:
| JP3614460 | MANUFACTURE OF TUNNEL EFFECT SENSOR |
| JP2008216118 | DYNAMIC QUANTITY SENSOR |
| WO/2023/032304 | MEMS DEVICE |
Inventors:
Yukihisa Takeuchi
Tsutomu Nanataki
Tsutomu Nanataki
Application Number:
JP24117294A
Publication Date:
May 08, 2001
Filing Date:
October 05, 1994
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
H01L29/84; B41J2/16; H01L41/08; H01L41/09; H01L41/22; H04R17/00; H04R17/08; (IPC1-7): H01L41/08; H01L29/84; H01L41/22; H04R17/00
Attorney, Agent or Firm:
Michio Nakajima (2 outside)