FILMING METHOD FOR AMORPHOUS SILICON MEMBRANE

Title:

FILMING METHOD FOR AMORPHOUS SILICON MEMBRANE

Document Type and Number:

Japanese Patent JP3507889

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a filming method for an amorphous silicon membrane having satisfactory film quality by markedly reducing a cluster quantity in silane-discharging plasma.
SOLUTION: When filming the amorphous silicon membrane on a member to be filmed held by a first electrode while using a filming device provided with a vacuum container, the first electrode located inside the vacuum container for holding the member to be filmed, a second electrode located inside the vacuum container while facing the first electrode and having a plurality of gas exhausting parts on the surface facing the first electrode, gas exhaust holes formed on the side wall of the vacuum container, a high frequency power source connected to the second electrode and a raw material gas feeding means, the first electrode is heated to a high temperature of 240 to 260°C and the second electrode is maintained at a temperature lower than the first electrode.

More Like This:

JPS603636	MANUFACTURE OF BODY FOR RETAINING ELECTROSTATIC LATENT IMAGE
JPS63230880	DEVICE FOR FORMING FUNCTIONAL DEPOSITED FILM BY MICROWAVE PLASMA CVD METHOD

Inventors:

Watanabe, Masao
Shiratani, Masaharu
Koga, Kazunori

Application Number:

JP2001105872A

Publication Date:

March 15, 2004

Filing Date:

April 04, 2001

Export Citation:

Click for automatic bibliography generation Help

Assignee:

Kyushu, Univ

International Classes:

C23C16/24; C23C16/509; H01L21/205; H01L21/336; H01L29/786; H01L31/04; (IPC1-7): H01L21/205; C23C16/24; C23C16/509; H01L21/336; H01L29/786; H01L31/04

Attorney, Agent or Firm:

鈴江武彦（外５名）

Previous Patent: グリシニン、β−コングリシニンおよびプログリシニンの結晶、三次元座�...

Next Patent: NEW ALKALI PHOSPHATASE DERIVED FROM SHEWANELLA SP. SIB1 STRAIN