Title:
FLASH MEMORY REWRITING METHOD
Document Type and Number:
Japanese Patent JP2001273197
Kind Code:
A
Abstract:
To avoid lowering of reliability by reducing a time for rewriting data in a flash memory even in occurrence of abnormal data in it, so as to reduce a system stopping time.
In a memory system which mounts program data in the flash memory and transfers this program data to RAM 2 to perform, data in the memory 1 is regularly checked and in the case of detecting abnormality, data in the memory 1 is rewritten with data in RAM 2 like an arrow in the figure. Thus, the system stopping time is reduced to secure reliability.
Inventors:
TERADA SATORU
Application Number:
JP2000086345A
Publication Date:
October 05, 2001
Filing Date:
March 27, 2000
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
G06F12/16; (IPC1-7): G06F12/16
Attorney, Agent or Firm:
Iwao Yamaguchi (2 people outside)