To improve charge retention of a flash memory.
This flash memory contains a semiconductor substrate 11, an element isolation insulating film 21 formed in the semiconductor substrate, an first insulating film 12 formed on the semiconductor substrate, a second insulating film 13 formed on the first insulating film 12, a third insulating film 14 formed on the second insulating film and fourth insulating films 19 and 24 formed at least on one of first both side surfaces in a first direction in the second insulating film and second both side surfaces in a second direction crossing to the first direction. The second insulating film contains a first tunnel insulating film 20 lower in a barrier height to a hole than the first and third insulating films, a first charge storage layer 15 formed on the first tunnel insulating film, a first block insulating film 16 formed on the first charge storage layer, and a first control gate electrode 22 which is formed on the first block insulating film and extended in the first direction.
| JPS6245075 | NON-VOLATILE MEMORY |
| JPS58196053 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
| JP3403031 | PRODUCTION OF SEMICONDUCTOR DEVICE |
OZAWA YOSHIO
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Tetsuya Kazama
Katsumura Hiro
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen