PURPOSE: To simplify structure, and to facilitate manufacture by constituting a device under the state in which one semiconductor element or a plurality of semiconductor elements are combined.

CONSTITUTION: A flat type diode device has at least one semiconductor device 18, a first electrode conductor 21 connected to a first main circuit electrode for the semiconductor device 18 and a second electrode conductor 19 connected to a second main circuit electrode for the semiconductor device 18. Contact pressure F, which works to both electrode conductors 21, 19 and does not work to the semiconductor device 18, is applied to both electrode conductors 21, 19 and both electrode conductors 21, 19 are connected to external circuits 7, 10, and the whole device is brought to the state in which one semiconductor element or a plurality of semiconductor elements are combined. Consequently, the main circuit electrode for the semiconductor element 18 and a control electrode are not led out to the outside by pressure welding. Accordingly, structure is simplified, and manufacture is facilitated.