Title:
FLOATING GATE TRANSISTOR AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JPH08255878
Kind Code:
A
Abstract:
PURPOSE: To obtain a floating gate transistor, and a fabrication method thereof in which a refresh time appropriate for a DRAM, comprising a floating gate transistor can be ensured.
CONSTITUTION: A gate insulation film comprising a dielectric film 4 and an SiC film 5 is provided on a silicon substrate 1 and a floating gate 6 is provided on the gate insulation film. The dielectric film 4 is provided at least one of the interface between the SiC film 5 and the silicon substrate 1 and the interface between the SiC film 5 and the floating gate 6. Thickness of the dielectric film 4 is set such that the tunnel conduction prevails.
Inventors:
SUGITA YOSHIHIRO
ITAKURA TORU
ITAKURA TORU
Application Number:
JP5696095A
Publication Date:
October 01, 1996
Filing Date:
March 16, 1995
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/8247; G11C11/401; H01L27/10; H01L29/788; H01L29/792; (IPC1-7): H01L27/10; H01L21/8247; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Shoji Kashiwaya (1 person outside)
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