To provide a resist composition having high dissolution rate with a developing fluid and excellent dry etching resistance and provide a fluorine-containing tricyclononene polymer to be used in the resist composition.
The fluorine-containing tricyclononene polymer is expressed by formula (I): -(T)-(N)-(A)- (T is a structure unit derived from a fluorine-containing tricyclononene derivative having an OH group and/or an acid-dissociating functional group dissociating with an acid to form an OH group; N is a structure unit derived from at least one monomer (n) selected from norbornene derivatives; and A is a structure unit derived from other monomer (a) copolymerizable with the monomer (t) and/or the monomer (n)). The amounts of the structure units T, N and A are 55-100 mol%, 0-45 mol% and 0-20 mol%, respectively, the amount of T+N is 80-100 mol% and the molar ratio of T/N is 55/45-100/0.
YOSHIDA TOMOHIRO
YAMASHITA TSUNEO
Fumio Akiyama