To provide a focus ring for a plasma etching device comprising a vitrified carbon material little in consumption when etching and excellent in yield of products.

This focus ring for plasma etching device is composed of a vitrified carbon material satisfying the formula R≥(d002-3.344)/0.135 in the relation between a relative intensity ratio R (IA/IB) of the spectrum intensity (IA) appearing in 1360±100cm-1 band region and the spectrum intensity (IB) appearing in 1580±100cm-1 band region in a Raman spectrum analysis by using argon laser beam of 5145 angstrom, and the average lattice spacing (d002) (angstrom) of graphite hexagonal net plane layer. Preferably, the relative intensity ratio R is regulated so as to be 1.0-2.0 and the average lattice spacing d002 is regulated so as to be 3.40-3.60.