Title:
NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JP3233139
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element having a high emission efficiency and a low working voltage realized through good ohmic contact, and a fabrication method thereof.
SOLUTION: In the p-type layer of a nitride semiconductor light emitting element, activation rate of p-type impurities is increased by decreasing hydrogen concentration during growth of a p-type clad layer 6 and crystallinity is recovered by increasing hydrogen concentration during growth of a p-type contact layer 7 thus balancing the electrical characteristics and crystallinity of the p-type layer totally.
More Like This:
| JPH06124901 | PREPARATION OF COMPOUND SEMICONDUCTOR THIN FILM |
| JPH10270536 | MANUFACTURE OF LATERAL BOAT AND LATERAL BOAT |
| JPS6261319 | VAPOR GROWTH DEVICE |
Inventors:
Hidenori Kamei
Application Number:
JP27871499A
Publication Date:
November 26, 2001
Filing Date:
September 30, 1999
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/205; H01L33/06; H01L33/32; H01L33/40; H01S5/042; H01S5/323; H01S5/343; (IPC1-7): H01L33/00; H01L21/205; H01S5/323
Domestic Patent References:
| JP8148718A | ||||
| JP11150296A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)