PURPOSE: To make a coverage of an electrode interconnection layer good in a part of an electrode connecting hole and to reduce a danger of a disconnection and the like in the part by a method wherein a recessed part which is larger than the electrode connecting hole to be formed is formed in a definite depth on an insulating film by a photolithographic operation and, after that, the electrode connecting hole is formed in a position where the recessed part has been formed by executing the photolithographic operation again.

CONSTITUTION: A patterning operation of an electrode connecting hole is executed by using a photomask having an opening pattern which is larger than the electrode connecting hole to be formed. By adopting an RIE operation, an insulating film 2 is etched down to a definite depth from its surface to form a recessed part 3. Then, the BPSG film 2 in which the recessed part has been formed is annealed in a steam atmosphere; side faces of the vertically steep recessed part 3 are made to reflow; a gentle curve-shaped recessed part 4 is formed. By a second photolithographic operation, an electrode connecting hole 5 which has pierced the insulating film 2 is formed in the recessed part 4.