PURPOSE: To remove any chute on pattern or uneven contact part while preventing a metallic film from being disconnected by a method wherein an overhanged negative resist patterns are formed on an insulating film.

CONSTITUTION: A thermal oxide film 2 is formed on a semiconductor substrate 1 to form overhanged resist patterns 6 thereon. First, the film 2 is etched to make a contact hole 4 until the substrate 1 is exposed and then Al films 5 are evaporated on the hole 4 and patterns 6 while maintaining the overhanged shape of patterns 6. Second, the patterns 6 are peeled off by ultrasonic wave cleaning process and then Al films 5 evaporated on the patterns 6 are removed to form a contact pattern with the hole 4 filled with the Al films 5. The patterns 6 are composed of naphthoquinonediazidesulphonic acid ester. Finally, an Al film 7 is formed on the buried Al films 5 and the film 2 to form a flat pattern with the hole 4 filled with a conductor.