FORMATION OF FILM IN SEMICONDUCTOR DEVICE - NIPPON TELEGRAPH & TELEPHONE

Title:

FORMATION OF FILM IN SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS58147034

Kind Code:

A

Abstract:

PURPOSE:To perform patterning on a second film by covering a first film pattern on a substrate with a second film, heating component under the ambient condition containing specified gas, gasifing or vaporizing or sublimating the product by reaction with the first film and removing the second film placed on the first film. CONSTITUTION:A pattern 5 of Mo etc. is provided on a Si substrate 1. After it is purified, the pattern is covered with a SiO2 film 6 by the CVD method. An intermediate device is momentarily dipped into the HF solution, a groove is formed along the outside of pattern 5, and it is heated up to 500 deg.C or higher in the O2 ambient in order to form a Mo oxide. The Mo oxide is immediately gasified or sublimated. Thereby the pattern 5 is lost. Therefore, a SiO2 film 6' on the pattern 5 can be easily removed by spraying water or N2 and a pattern of film 6 can be formed. The film 6 may be Al2O3 or Si3N4 and Mo can be replaced with W. In case Al, Ti are sued, they can be processed in the same way by heating them up to 200 deg.C or higher under the ambient atmosphere containing Cl2.

More Like This:

JPS5591814	MANUFACTURE OF SEMICONDUCTOR DEVICE
JPH0399421	FORMATION OF SOI STRUCTURE
JP2756910	[Title of Invention] Magnetic field generator for magnetron plasma

Inventors:

YAMAUCHI NORIYOSHI
TANIUCHI TOSHIAKI
WADA TSUTOMU
TERAJIMA MAKOTO

Application Number:

JP2879582A

Publication Date:

September 01, 1983

Filing Date:

February 26, 1982

Export Citation:

Click for automatic bibliography generation Help

Assignee:

NIPPON TELEGRAPH & TELEPHONE

International Classes:

H01L21/302; H01L21/033; H01L21/3065; (IPC1-7): H01L21/306

Attorney, Agent or Firm:

Toshio Takayama

Previous Patent: PATTERN FORMATION

Next Patent: BURR REMOVING MATERIAL AND METHOD FOR SEMICONDUCTOR MOLD RESIN