Title:
FORMATION OF FINE PATTERN IN SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPH01129417
Kind Code:
A
Abstract:
PURPOSE:To decrease processing to one time, and to simplify a process by using a resist photosensitized to Deep UV rays as a lower layer and a high molecular film including a material having photosensitivity to UV rays and being brought to an opaque state to Deep UV rays by photosensitization to UV rays as an upper layer and forming a pattern. CONSTITUTION:CMS as a lower layer resist 32 photosensitized to Deep UV rays is shaped onto a foundation substrate 11 through a spin coating method. A mask pattern is replicated onto a CEM film as an upper layer by employing a mask 15 by UV rays 16. A section irradiated with UV rays 16 in the CEM film 14 is brought to an opaque state to Deep UV rays 17, and a section not irradiated is left as it is brought to a transparent state. The batch exposure of Deep UV rays 17 is conducted. Water is dried by spin dry or N2 blow, and CMS in the lower layer resist 12 is developed.
Inventors:
YAMAUCHI TAKAHIRO
Application Number:
JP28728887A
Publication Date:
May 22, 1989
Filing Date:
November 16, 1987
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/027; G03F7/095; G03F7/11; (IPC1-7): G03C1/00; G03F7/00; H01L21/30
Attorney, Agent or Firm:
Hiroshi Kikuchi